[ibis-macro] Re: On-die S-parameters?

  • From: "Muranyi, Arpad" <Arpad_Muranyi@xxxxxxxxxx>
  • To: "'ibis-macro@xxxxxxxxxxxxx'" <ibis-macro@xxxxxxxxxxxxx>
  • Date: Tue, 4 Mar 2014 06:22:24 +0000

David,

I think the short answer is that what you are asking for is now all
officially supported by the v6.0 specification.  But here are some
details:

#1)  Yes, you can just have one [Model], and use the [External Model]
with language "IBIS-ISS".  This will let you implement your analog
buffer model using one or more Touchstone files.  You can also parameterize
the IBIS-ISS subcircuit so that the name of the Touchstone file is
a string parameter.  This way one [Model] and [External Model] inside
it and a single IBIS-ISS subcircuit can have many different S-parameter
models, each of which can describe a certain buffer impedance, etc...

If your signal swing needs to be changed, you can also parameterize
the D_to_A converter (which acts as the stimulus to the IBIS-ISS
subcircuit) using the new "Converter_Parameters" subparameter of
[External Model].

All of these parameter definitions in the .ibs file can also contain
references to parameter files, and if you reference a .ami file you can
also synchronize these parameters with AMI model parameters.

#2)  This is now all in the v6.0 IBIS specification, so no proprietary
solutions are needed to achieve all this.

#3)  This modeling approach will give you the correct results as long
as the linear S-parameter model with a trapezoidal (ideal) stimulus
is able to adequately describe your buffer's analog behavior.  (In other
words if the buffer is pretty much LTI).  But that is the fundamental
requirement of this entire AMI modeling approach, so if your buffer
has strong non-LTI features, AMI would not be suitable anyway.

I hope this answers your questions.

Thanks,

Arpad
===========================================================================

From: ibis-macro-bounce@xxxxxxxxxxxxx [mailto:ibis-macro-bounce@xxxxxxxxxxxxx] 
On Behalf Of David Banas
Sent: Monday, March 03, 2014 8:21 PM
To: 'ibis-macro@xxxxxxxxxxxxx'
Subject: [ibis-macro] On-die S-parameters?

Hi Experts,

Can anyone answer this one:

Let's say I have a Tx with variable analog behavior. That is, things like 
output drive strength, output impedance, and output slew rate are user 
selectable, in the silicon. In that case:

1.       Will the on-die S-parameters approach to analog modeling allow me to 
reduce the number of [Model]s in my *.IBS file to one, and make ALL model 
behavior, both analog and algorithmic, configurable, via some sort of AMI 
parameter sweep matrix in the simulator?

2.       If so, is this ready to go, today, in the standard, or does it require 
a proprietary approach?

3.       Also, will modeling this way give true channel characterization, or 
will I be forced to "cheat" making up for some amount of channel 
characterization inaccuracy in the algorithmic portion of my model?

Thanks!
-db


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